High-Voltage High-Power IGBT

IGBT module from  Hitachi. The new IGBT module makes high energy efficiency and silent operation of inverters possible. It has High thermal fatigue durability. It is a High speed and low loss IGBT module.

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Low noise due to soft and fast recovery diode. The driving power is less as the MOS gate input capacitance is very low. The modules are very reliable and durable. The heatsink has a Isolation between terminals and base.

From 1700V to 6500V,  High Power Density, Low Inductance, Scalable, Easy Paralleling, Standard and High Isolation Package.

The Hitachi Power Semiconductor Devices mark a new era of Power electronics by High-Power IGBT modules, High-Voltage ICs and Power diodes.