WARP Speed IGBT – International Rectifier

IGBTs are voltage-controlled power transistors, that have higher current densities than equivalent high-voltage power MOSFETs. (International Rectifier now with Infineon)

Features Includenn

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• 2 to 2.5 times the current density of MOSFETs

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• Lower conduction losses at equivalent current rating compared to MOSFETs

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• Reduced current tail for high frequency operation

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• “Positive-only” gate drive

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600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package

Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)

The IGBT in TO-247 delivers the same efficiency at full loadas the MOSFET in the larger TO-247 package.