The purpose of this text is to explore the internal behavior of semiconductor devices, so that we can understand the relation between the device geometry and material parameters on one hand and the resulting electrical characteristics on the other hand.
The Primary Focus: The MOSFET and CMOS Integrated Circuits The Metal-Oxide-Silicon Field-Effect-Transistor (MOSFET) is the main subject of this text, since it is already the prevailing device in microprocessors and memory circuits.
In addition, the MOSFET is increasingly used in areas as diverse as mainframe computers and power electronics. The MOSFET’s advantages over other types of devices are its mature fabrication technology, its successful scaling characteristics and the combination of complementary MOSFETs yielding CMOS circuits.
Topics Include -Schottky diode current, Metal-Semiconductor contacts,Electrostatic analysis of a p-n diode,Reverse bias breakdown, Optoelectronic devices, Light Emitting Diodes (LEDs), Ideal transistor model.